Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene-Reference-Cited by-同舟云学术

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Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene

Published:2011-03-14 Issue:11 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Åhlgren E. H.,Kotakoski J.,Krasheninnikov A. V.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.115424/fulltext

Reference51 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Helical microtubules of graphitic carbon

3. The electronic properties of graphene

4. Two-dimensional carbon semiconductor: Density functional theory calculations

5. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

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