Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.085313/fulltext
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1. Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors
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3. Ge/Si nanowire heterostructures as high-performance field-effect transistors
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