Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys-Reference-Cited by-同舟云学术

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Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys

Published:2000-07-15 Issue:4 Volume:62 Page:2522-2535
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Klochikhin A. A.,Davydov V. Yu.,Goncharuk I. N.,Smirnov A. N.,Nikolaev A. E.,Baidakova M. V.,Aderhold J.,Graul J.,Stemmer J.,Semchinova O.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.2522/fulltext

Reference47 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Some problems of the dynamic theory of non-ideal crystal lattices

4. Some effects of point defects on the vibrations of crystal lattices

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1. Assesment of a model to calculate the refractive index of AlXGa1-XN epilayers using the multi-oscillator model simulation of the infrared reflectance;Physica B: Condensed Matter;2022-01

2. Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions;Semiconductors;2019-11

3. Comments on a peak of Al x Ga 1 − x N observed by infrared reflectance;Infrared Physics & Technology;2016-05

4. Determination of Al molar fraction in AlxGa1-xN films by Raman scattering;Journal of Applied Physics;2011-08

5. Infrared optical anisotropy of diluted magneticGa1−xMnxN∕c-sapphire epilayers grown with a GaN buffer layer by metalorganic chemical vapor deposition;Physical Review B;2007-05-14

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