Distorted iron films onGaAs(001)−(4×6)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.2151/fulltext
Reference35 articles.
1. Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8×2)
2. Magnetism of Fe thin layers on GaAs (001)
3. Properties of Fe single‐crystal films grown on (100)GaAs by molecular‐beam epitaxy
4. Influence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs(001)
5. Continuous evolution of the in‐plane magnetic anisotropies with thickness in epitaxial Fe films
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1. Effect of low-temperature post-growth annealing on anisotropic strain in epitaxial Fe layers deposited on GaAs(001);Journal of Applied Physics;2016-06-28
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4. Anisotropic exchange coupling and stress-induced uniaxial magnetic anisotropy in Fe/GaAs(001);Physical Review B;2012-04-18
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