Structural and electronic properties of3dtransition metal impurities in silicon carbide
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.155212/fulltext
Reference31 articles.
1. Particle-Packing Phenomena and Their Application in Materials Processing
2. Polytypic transformations in silicon carbide
3. Deep level centers in silicon carbide: A review
4. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
5. Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions
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