Green's function theory for predicting device-to-device variability
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.085420/fulltext
Reference25 articles.
1. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study
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3. Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
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5. Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons From $\hbox{10}^{5}$ Sample Simulations
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