Clean and Cs-exposed Si(111)√3 × √3 :B surface studied with high-resolution photoemission
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.11165/fulltext
Reference22 articles.
1. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
2. Surface doping and stabilization of Si(111) with boron
3. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
4. Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffraction
5. Electronic states due to surface doping: Si(111)√3×√3B
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