Stability and charge transfer levels of extrinsic defects inLiNbO3-Reference-Cited by-同舟云学术

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Stability and charge transfer levels of extrinsic defects inLiNbO3

Published:2010-11-15 Issue:18 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Xu Haixuan,Chernatynskiy Aleksandr,Lee Donghwa,Sinnott Susan B.,Gopalan Venkatraman,Dierolf Volkmar,Phillpot Simon R.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.184109/fulltext

Reference91 articles.

1. Er-doped integrated optical devices in LiNbO/sub 3/

2. Dual wavelength, 980 nm-pumped, Er/Yb-codoped waveguide laser in Ti:LiNbO3

3. Polarisation-independent Er:Ti:LiNbO3 waveguide amplifier pumped by a laser diode at 980 nm

4. Lattice site of Mg ion in LiNbO3crystal determined by Raman spectroscopy

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