Electronic structure of the surface unoccupied band of Ge(001)- c(4×2) : Direct imaging of surface electron relaxation pathways
Author:
Funder
Japan Society for the Promotion of Science
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.115301/fulltext
Reference25 articles.
1. Semiconductor Surfaces and Interfaces
2. Critical differences in the surface electronic structure of Ge(001) and Si(001):Ab initiotheory and angle-resolved photoemission spectroscopy
3. Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy
4. Electronic states of the clean Ge(001) surface near Fermi energy
5. Origin of a surface state above the Fermi level on Ge(001) and Si(001) studied by temperature-dependent ARPES and LEED
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1. New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation;Applied Surface Science;2022-01
2. Electronic transport in planar atomic-scale structures measured by two-probe scanning tunneling spectroscopy;Nature Communications;2019-04-05
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