Suppressed piezoelectric polarization in single InGaN/GaN heterostructure nanowires-Reference-Cited by-同舟云学术

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Suppressed piezoelectric polarization in single InGaN/GaN heterostructure nanowires

Published:2013-10-28 Issue:15 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tsai Wen-Che,Chen Yen-Ting,Lin Chia-Hsien,Hsu Wei-Ting,Hsu Yung-Sheng,Chen Li-Chyong,Chen Kuei-Hsien,Chang Wen-Hao

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.155323/fulltext

Reference34 articles.

1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

2. Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

3. Small band gap bowing in In1−xGaxN alloys

4. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

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1. Recent advances in InGaN nanowires for hydrogen production using photoelectrochemical water splitting;Materials Today Energy;2023-04

2. An SEM-Based Nanomanipulation System for Multiphysical Characterization of Single InGaN/GaN Nanowires;IEEE Transactions on Automation Science and Engineering;2023-01

3. Anisotropic exciton Stark shift in hemispherical quantum dots;Chinese Physics B;2021-05-01

4. Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting;Advanced Functional Materials;2020-09-23

5. Origin of high quantum efficiency in Si-based homoepitaxial InGaN/GaN light-emitting diodes;Journal of Physics D: Applied Physics;2020-06-29

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