Anisotropic tunneling resistance in a phosphorene-based magnetic barrier
Author:
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.165416/fulltext
Reference42 articles.
1. The electronic properties of graphene
2. Black phosphorus field-effect transistors
3. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
4. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
5. Strain-Induced Gap Modification in Black Phosphorus
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2. Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation;Journal of Physics: Condensed Matter;2023-04-06
3. Spin-dependent tunnelling time in phosphorene superlattice;Philosophical Magazine;2023-03-02
4. Spin transport properties of phosphorene multiple quantum barrier structure under strain and Rashba spin-orbit interaction;Materials Science and Engineering: B;2022-04
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