Effect of the doping concentration on the zero-field spin splitting and Rashba parameter in ap-InAs MOSFET
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.165329/fulltext
Reference34 articles.
1. Electronic analog of the electro‐optic modulator
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5. Rashba effect in inversion layers onp-type InAs MOSFET’s
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