Tunneling and nonresonant negative differential resistance in narrow-well interband-tunneling devices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.16829/fulltext
Reference14 articles.
1. New negative differential resistance device based on resonant interband tunneling
2. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
3. Negative differential resistance in InAs/GaSb single-barrier heterostructures
4. Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
5. Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures
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1. Magneto-infrared modes in InAs-AlSb-GaSb coupled quantum wells;Physical Review B;2010-09-09
2. InAs/GaSb interfaces; the problem of boundary conditions;Journal of Physics: Condensed Matter;1998-10-05
3. Energy spectrum of heterostructures;Solid State Communications;1997-11
4. Excitonic Instability and Electric-Field-Induced Phase Transition Towards a Two-Dimensional Exciton Condensate;Physical Review Letters;1996-07-29
5. Band‐structure tailoring by electric field in a weakly coupled electron‐hole system;Applied Physics Letters;1995-04-10
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