Microscopic mechanisms behind the high mobility in rubrene single-crystal transistors as revealed by field-induced electron spin resonance-Reference-Cited by-同舟云学术

Microscopic mechanisms behind the high mobility in rubrene single-crystal transistors as revealed by field-induced electron spin resonance

Published:2011-02-04 Issue:7 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Marumoto Kazuhiro,Arai Norimichi,Goto Hiromasa,Kijima Masashi,Murakami Kouichi,Tominari Yukihiro,Takeya Jun,Shimoi Yukihiro,Tanaka Hisaaki,Kuroda Shin-ichi,Kaji Toshihiko,Nishikawa Takao,Takenobu Taishi,Iwasa Yoshihiro

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.075302/fulltext

Reference27 articles.

1. Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers

2. High-Performance Organic Field-Effect Transistors from Organic Single-Crystal Microribbons Formed by a Solution Process

3. Interface-Controlled, High-Mobility Organic Transistors

4. Effect of Interfacial Shallow Traps on Polaron Transport at the Surface of Organic Semiconductors

5. Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

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