Two-dimensional hole gas and Fermi-edge singularity in Be δ-doped GaAs-Reference-Cited by-同舟云学术

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Two-dimensional hole gas and Fermi-edge singularity in Be δ-doped GaAs

Published:1993-04-15 Issue:15 Volume:47 Page:9629-9640
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Richards D.,Wagner J.,Schneider H.,Hendorfer G.,Maier M.,Fischer A.,Ploog K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.9629/fulltext

Reference68 articles.

1. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures

2. Delta doping of III–V compound semiconductors: Fundamentals and device applications

3. The σ doping layer: Electronic properties and device perspectives

4. Migration of Si in δ-doped GaAs

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Occupation of electron subbands in optically excitedδ-acceptor-doped GaAs/AlxGa1−xAs heterostructure;Physical Review B;2011-06-24

2. Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition;Journal of Applied Physics;2008-06-15

3. STARK EFFECT IN P-TYPE DELTA-DOPED QUANTUM WELLS;Progress In Electromagnetics Research Letters;2008

4. Isolation of p-type carbon δ-doped layers in GaAs by ion bombardment;Journal of Physics D: Applied Physics;2006-12-15

5. calculations for double p-type -doped quantum wells in GaAs;Superlattices and Microstructures;2006-08

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