Electronic band structure of epitaxial CuInSe2films
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.115109/fulltext
Reference36 articles.
1. Solar cell efficiency tables (version 36)
2. Electronic properties of Cu(In,Ga)Se 2 heterojunction solar cells-recent achievements, current understanding, and future challenges
3. The electronic structure of chalcopyrites-bands, point defects and grain boundaries
4. Excited states of the free excitons in CuInSe2 single crystals
5. Surface properties of (111), (001), and (110)-oriented epitaxial CuInS2/Si films
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1. Optical and Structural Properties of High-Efficiency Epitaxial Cu(In,Ga)Se2 Grown on GaAs;ACS Applied Materials & Interfaces;2019-12-10
2. Segregation of point defects at the CuInSe2(001)/GaAs(001) interface;Solid State Communications;2019-09
3. Single-Crystal Growth and Characterization of the Chalcopyrite Semiconductor CuInTe2 for Photoelectrochemical Solar Fuel Production;The Journal of Physical Chemistry Letters;2018-11-15
4. Epitaxial growth of CuGaSe 2 thin-films by MBE—Influence of the Cu/Ga ratio;Applied Surface Science;2017-09
5. Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2;Physical Review B;2016-04-11
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