Conductance of a single electron transistor with a retarded dielectric layer in the gate capacitor-Reference-Cited by-同舟云学术

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Conductance of a single electron transistor with a retarded dielectric layer in the gate capacitor

Published:2015-11-16 Issue:20 Volume:92 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Udalov O. G.,Chtchelkatchev N. M.,Fedorov S. A.,Beloborodov I. S.

Funder

National Science Foundation

Russian Academy of Sciences

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.92.205416/fulltext

Reference52 articles.

1. A boost for quantum computing

2. One minute parity lifetime of a NbTiN Cooper-pair transistor

3. Probing Majorana bound states via counting statistics of a single electron transistor

4. Multifractality of random eigenfunctions and generalization of Jarzynski equality

5. Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor

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1. Influence of electric polarization on Coulomb blockade in a super-paraelectric clusters assembly;Applied Physics Letters;2019-12-23

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