Local density of states induced near impurities in Mott insulators-Reference-Cited by-同舟云学术

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Local density of states induced near impurities in Mott insulators

Published:2024-08-05 Issue:8 Volume:110 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ding Wenxin¹²³^ORCID,Si Qimiao²

Affiliation:

1. Anhui University

2. Rice University

3. Kavli Institute for Theoretical Sciences

Funder

National Science Foundation

Welch Foundation

National Key Research and Development Program of China

Anhui University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.110.L081104/fulltext

Reference22 articles.

1. Doping a Mott insulator: Physics of high-temperature superconductivity

2. Band gaps and electronic structure of transition-metal compounds

3. Antiferromagnetism. Theory of Superexchange Interaction

4. Visualizing the atomic-scale electronic structure of the Ca2CuO2Cl2 Mott insulator

5. Visualizing the evolution from the Mott insulator to a charge-ordered insulator in lightly doped cuprates

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