Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films
Author:
Funder
Army Research Laboratory
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.3.054404/fulltext
Reference59 articles.
1. Applications of Modern Ferroelectrics
2. Material Aspects in Emerging Nonvolatile Memories
3. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process
4. Ferroelectricity in hafnium oxide thin films
5. Ferroelectricity in yttrium-doped hafnium oxide
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