Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric-Reference-Cited by-同舟云学术

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

Published:2019-02-01 Issue:2 Volume:3 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Neumayer Sabine M.,Eliseev Eugene A.,Susner Michael A.,Tselev Alexander,Rodriguez Brian J.,Brehm John A.,Pantelides Sokrates T.,Panchapakesan Ganesh,Jesse Stephen,Kalinin Sergei V.,McGuire Michael A.,Morozovska Anna N.,Maksymovych Petro,Balke Nina

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Oak Ridge National Laboratory

Centro de Investigação em Materiais Cerâmicos e Compósitos

Air Force Research Laboratory

Air Force Office of Scientific Research

National Research Council

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.3.024401/fulltext

Reference37 articles.

1. Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

2. High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

3. Terahertz plasmonics in ferroelectric-gated graphene

4. Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

5. Integrating functional oxides with graphene

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