Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7-Reference-Cited by-同舟云学术

Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7

Published:2020-09-08 Issue:9 Volume:4 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Filippone Stephen^ORCID,Zhao Boyang,Niu Shanyuan,Koocher Nathan Z.,Silevitch Daniel^ORCID,Fina Ignasi^ORCID,Rondinelli James M.^ORCID,Ravichandran Jayakanth^ORCID,Jaramillo R.^ORCID

Funder

National Science Foundation

“la Caixa” Foundation

Ministerio de Economía y Competitividad

Federación Española de Enfermedades Raras

Generalitat de Catalunya

Army Research Office

Air Force Office of Scientific Research

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.091601/fulltext

Reference24 articles.

1. In praise and in search of highly-polarizable semiconductors: Technological promise and discovery strategies

2. Optimal Bandgap in a 2D Ruddlesden–Popper Perovskite Chalcogenide for Single-Junction Solar Cells

3. Bandgap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

4. Extraordinary Strong Band‐Edge Absorption in Distorted Chalcogenide Perovskites

5. Band gap evolution in Ruddlesden-Popper phases

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