Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening-Reference-Cited by-同舟云学术

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Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening

Published:2017-10-04 Issue:5 Volume:1 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Borghardt Sven,Tu Jhih-Sian,Winkler Florian,Schubert Jürgen,Zander Willi,Leosson Kristjan,Kardynał Beata E.

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.1.054001/fulltext

Reference49 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Black phosphorus field-effect transistors

3. Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

4. Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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