Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate-Reference-Cited by-同舟云学术

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Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate

Published:2013 Issue:1-2 Volume:85 Page:75-105
ISSN:0921-7134
Container-title:Asymptotic Analysis
language:
Short-container-title:

Author:

Wu Hao¹,Jiang Jie²

Affiliation:

1. School of Mathematical Sciences and Shanghai Key Laboratory for Contemporary Applied Mathematics, Fudan University, Shanghai, China. E-mail: haowufd@yahoo.com

2. Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, China. E-mail: jiangbryan@gmail.com

Publisher

IOS Press

Subject

General Mathematics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An hybrid finite element method for a quasi-variational inequality modeling a semiconductor;RAIRO - Operations Research;2022-10-26

2. Parallel Implementation of Stochastic Simulation Algorithm for Nonlinear Systems of Electron-Hole Transport Equations in a Semiconductor;Communications in Computer and Information Science;2020

3. Uniform-in-time bounds for approximate solutions of the drift–diffusion system;Numerische Mathematik;2019-01-08

4. A comparison of computational models for the extracellular potential of neurons;Journal of Integrative Neuroscience;2017-02-10

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