A numerical simulation model for the growth of {\rm Ga}_x{\rm In}_{1-x}{\rm Sb} by the travelling heater method
Author:
Affiliation:
1. Department of Mechanical Engineering, University of Victoria, and Centre for Advanced Materials and Related Technology, Victoria, BC, Canada V8W 3P6
2. Amistar Research Inc., Victoria, BC, Canada
Publisher
IOS Press
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of rotating magnetic field on temperature field and flow field of Ga1−x In x Sb crystal growth with traveling heater method;Japanese Journal of Applied Physics;2020-04-29
2. Modeling Semiconductor Crystal Growth Under Electromagnetic Fields;Advanced Structured Materials;2018
3. Crystal Growth by Traveling Heater Method;Handbook of Crystal Growth;2015
4. Electrical conductivity variation of (Bi2Te3)0.25(Sb2Te3)0.75 crystal grown using the zone melting method;International Journal of Materials Research;2013-03-14
5. Controlling the growth interface shape in the growth of CdTe single crystals by the traveling heater method;Comptes Rendus Mécanique;2007-05
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