Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films-Reference-Cited by-同舟云学术

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Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

Published:2012 Issue:02 Volume:03 Page:67-71
ISSN:2153-117X
Container-title:Materials Sciences and Applications
language:
Short-container-title:MSA

Author:

Pethuraja Gopal G.,Welser Roger E.,Sood Ashok K.,Lee Changwoo,Alexander Nicholas J.,Efstathiadis Harry,Haldar Pradeep,Harvey Jennifer L.

Publisher

Scientific Research Publishing, Inc.

Subject

General Medicine

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mixed-Substituted Single-Source Precursors for Si_1–xGe_x Thin Film Deposition;Inorganic Chemistry;2022-10-19

2. Efficiency Enhancement of Thermophotovoltaic Cells With Different Design Configurations Using Existing Photon Recycling Technologies;Frontiers in Energy Research;2022-07-25

3. Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems;Advanced Photonics Research;2021-05-20

4. Direct laser writing of graded-index SiGe waveguides via phase segregation;Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI;2021-03-05

5. Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films;ACS Applied Materials & Interfaces;2020-02-03

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