Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate-Reference-Cited by-同舟云学术

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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

Published:2014 Issue:12 Volume:02 Page:1113-1117
ISSN:2327-4352
Container-title:Journal of Applied Mathematics and Physics
language:
Short-container-title:JAMP

Author:

Adhikari Sonachand,Patra Saroj Kanta,Lunia Ashok,Kumar Sandeep,Parjapat Priyavart,Kushwaha Bhoopendra,Kumar Pawan,Singh Sumitra,Chauhan Ashok,Singh Kuldip,Pal Suchandan,Dhanavantri C.

Publisher

Scientific Research Publishing, Inc.

Subject

General Medicine

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN film optical nonlinearity: wavelength dependent refractive index for All-Optical switching application;Optics & Laser Technology;2023-11

2. Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED;IOP Conference Series: Materials Science and Engineering;2018-03

3. Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well;physica status solidi (b);2016-11-08

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