Temperature and Doping Dependencies of the Transport Properties within GaN and GaAs
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Scientific Research Publishing, Inc.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron Mobility Calculations and Scattering Effects in GaN Compound Semiconductor;2024 IEEE 4th International Maghreb Meeting of the Conference on Sciences and Techniques of Automatic Control and Computer Engineering (MI-STA);2024-05-19
2. GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
3. Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods;Journal of Electronic Materials;2018-07-27
4. Characterization of the Absence of Polar and Inter-valley Scattering Mechanisms from Charge-Carrier Energy Curves for “In0.53Ga0.47As” Using Monte Carlo Simulation;Transactions on Electrical and Electronic Materials;2018-04-07
5. Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar;Journal of Applied Physics;2017-03-28
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