Clusters of Radiation Defects in Silicon Crystals-Reference-Cited by-同舟云学术

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Clusters of Radiation Defects in Silicon Crystals

Published:2015 Issue:09 Volume:06 Page:1270-1276
ISSN:2153-1196
Container-title:Journal of Modern Physics
language:
Short-container-title:JMP

Author:

Yeritsyan Hrant N.,Sahakyan Aram A.,Grigoryan Norair E.,Harutunyan Vachagan V.,Sahakyan Vahan A.,Khachatryan Armenuhi A.

Publisher

Scientific Research Publishing, Inc.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals;Journal of Electronic Materials;2023-09-18

2. Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers;Materials;2022-06-07

3. Modelling of disordering regions in proton-irradiated silicon;Journal of Physics: Conference Series;2020-05-01

4. Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures;Semiconductors;2020-02

5. Simulation of Electronic Center Formation by Irradiation in Silicon Crystals;Journal of Electronic Materials;2016-10-05

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