Investigation of charge transport properties in less defective nanostructured ZnO based Schottky diode
Author:
Affiliation:
1. Department of Physics
2. Jadavpur University
3. Kolkata – 700 032
4. India
5. Bejoy Narayan Mahavidyalaya
6. Hooghly-712147
7. UGC-DAE Consortium for Scientific Research
8. Kolkata-98
9. Bankim Sardar College
10. South 24-paraganas
Abstract
Positron annihilation approved less amount of defect in ZnO: effect on the performance of Al/ZnO/ITO Schottky diode.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA16828C
Reference23 articles.
1. Thick-film zinc-oxide gas sensor for the control of lean air-to-fuel ratio in domestic combustion systems
2. Thickness-dependent properties of indium-doped ZnO films
3. Role of zinc oxide nanomorphology on Schottky diode properties
4. Preferred orientation and piezoelectricity in sputtered ZnO films
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