Oxidative etching of S-vacancy defective MoS2 monolayer upon reaction with O2
Author:
Affiliation:
1. Departamento de Fisicoquímica
2. Instituto de Investigaciones en Físico Química de Córdoba (INFIQC)
3. Facultad de Ciencias Químicas
4. Universidad Nacional de Córdoba
5. X5000HUA Córdoba
6. Departamento de Química Teórica y Computacional
Abstract
The reactions of O2 with S vacancy sites within a MoS2 monolayer were investigated using ab initio molecular dnamics simulations.
Funder
Fondo para la Investigación Científica y Tecnológica
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CP/D0CP06502A
Reference46 articles.
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4. Gas dependent hysteresis in MoS 2 field effect transistors
5. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
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