Ambient stable solution-processed organic field effect transistors from electron deficient planar aromatics: effect of end-groups on ambient stability-Reference-Cited by-同舟云学术

Ambient stable solution-processed organic field effect transistors from electron deficient planar aromatics: effect of end-groups on ambient stability

Published:2024 Issue:11 Volume:14 Page:7915-7923
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Giri Indrajit¹^ORCID,Biswas Sagar¹,Chhetri Shant¹,Choudhuri Anwesha²^ORCID,Mondal Indrajit³,Senanayak Satyaprasad P.³,Iyer Parameswar Krishnan²^ORCID,Chaudhuri Debangshu¹^ORCID,Vijayaraghavan Ratheesh K.¹^ORCID

Affiliation:

1. Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia, West Bengal, 741246, India

2. Centre for Nanotechnology, Indian Institute of Technology, Guwahati, Assam, 781039, India

3. Nanoelectronics and Device Physics Lab, School of Physical Sciences, National Institute of Science Education and Research, OCC of HBNI, Odisha, 752050, India

Abstract

Enhancing the end group hydrophobicity leads to improved ambient stability of solution-processed n-type OFETs.

Funder

Indo-German Science and Technology Centre

Science and Engineering Research Board

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA01499E

Reference32 articles.

1. Recent progress in the development of n-type organic semiconductors for organic field effect transistors

2. Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

3. Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors

4. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

5. Solution‐Processed Organic Transistors with Excellent Electrical Stability under Ambient Conditions

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