Phonon transport in the nano-system of Si and SiGe films with Ge nanodots and approach to ultralow thermal conductivity-Reference-Cited by-同舟云学术

Phonon transport in the nano-system of Si and SiGe films with Ge nanodots and approach to ultralow thermal conductivity

Published:2021 Issue:9 Volume:13 Page:4971-4977
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Taniguchi Tatsuhiko¹²³⁴,Terada Tsukasa¹²³⁴,Komatsubara Yuki¹²³⁴,Ishibe Takafumi¹²³⁴,Konoike Kento¹²³⁴,Sanada Atsushi¹²³⁴,Naruse Nobuyasu⁵⁶⁷⁴,Mera Yutaka⁵⁶⁷⁴,Nakamura Yoshiaki¹²³⁴^ORCID

Affiliation:

1. Graduate School of Engineering Science

2. Osaka University

3. Toyonaka

4. Japan

5. Department of Fundamental Bioscience

6. Shiga University of Medical Science

7. Otsu

Abstract

Ballistic phonon transport was observed in Si films containing Ge nanodots. In SiGe films containing Ge nanodots, thermal conductivity was drastically reduced close to that of amorphous materials due to alloy phonon scattering and nanodot scattering.

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08499A

Reference51 articles.

1. Ballistic-Diffusive Heat-Conduction Equations