Tunable channel width of a UV-gate field effect transistor based on ZnO micro-nano wire-Reference-Cited by-同舟云学术

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Tunable channel width of a UV-gate field effect transistor based on ZnO micro-nano wire

Published:2014 Issue:35 Volume:4 Page:18378
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zheng Xin,Sun Yihui,Yan Xiaoqin,Chen Xiang,Bai Zhiming,Lin Pei,Shen Yanwei,Zhao Yanguang,Zhang Yue

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA01661K

Reference22 articles.

1. Scanning Probe Study on the Piezotronic Effect in ZnO Nanomaterials and Nanodevices

2. Self-Powered UV Photosensor Based on PEDOT:PSS/ZnO Micro/Nanowire with Strain-Modulated Photoresponse

3. High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector

4. Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p-n Junctions

5. ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed

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