Mechanical force-driven multi-state memory in WO<sub>3–<i>δ</i></sub> thin films-Reference-Cited by-同舟云学术

Mechanical force-driven multi-state memory in WO_3–δ thin films

Published:2024 Issue:13 Volume:11 Page:3919-3926
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Yang Mingdi¹,Lv Zonglin¹,Li Shan¹,Li Jiaqi¹,Cao Jinpeng¹,Chen Junjie¹,Wang Yilin²^ORCID,Lin Kun¹,Li Qiang¹^ORCID,Miao Jun¹^ORCID,Xing Xianran¹^ORCID

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China

2. College of Materials Science and Engineering, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China

Abstract

Mechanical force successfully induced multi-level resistance states in WO3–δ thin films through large inhomogeneous strain and lattice distortion.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Bagui Scholars Program of Guangxi Zhuang Autonomous Region

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/QI/D4QI00789A

Reference47 articles.

1. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

2. Nanoionics-based resistive switching memories

3. Resistive switching materials for information processing

4. Core−Shell Heterostructured Phase Change Nanowire Multistate Memory

5. Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

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1. Correction: Mechanical force-driven multi-state memory in WO_3−δ thin films;Inorganic Chemistry Frontiers;2024