High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor-Reference-Cited by-同舟云学术

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

Published:2022 Issue:21 Volume:22 Page:4129-4140
ISSN:1473-0197
Container-title:Lab on a Chip
language:en
Short-container-title:Lab Chip

Author:

Mishra Shivanshu¹²^ORCID,Kachhawa Pharyanshu¹²^ORCID,Jain Amber Kumar¹^ORCID,Thakur Rajiv Ranjan¹²^ORCID,Chaturvedi Nidhi¹²

Affiliation:

1. CSIR – Central Electronics Engineering Research Institute, Pilani, Rajasthan, India

2. Academy of Scientific and Innovative Research, Ghaziabad, Uttar Pradesh, India

Abstract

This work reports rapid, label-free and specific detection of the HER2 antigen using a gallium nitride (GaN) high electron mobility transistor (HEMT).

Funder

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Biomedical Engineering,General Chemistry,Biochemistry,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/LC/D2LC00349J

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5. Utility of Serum HER2 Extracellular Domain Assessment in Clinical Decision Making: Pooled Analysis of Four Trials of Trastuzumab in Metastatic Breast Cancer

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