Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing-Reference-Cited by-同舟云学术

Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing

Published:2023 Issue:9 Volume:10 Page:3643-3650
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Li Zhenhai¹²,Wang Tianyu¹²^ORCID,Meng Jialin¹²^ORCID,Zhu Hao¹²^ORCID,Sun Qingqing¹²,Zhang David Wei¹²,Chen Lin¹²^ORCID

Affiliation:

1. School of Microelectronics, Fudan University, Shanghai 200433, P. R. China

2. Zhangjiang Fudan International Innovation Center, Shanghai 201203, China

Abstract

The flexible Al-doping HfO2 ferroelectric synapse devices show excellent ferroelectricity, which mimic the paired-pulse facilitation and long-term potentiation/depression. Meanwhile, the digit recognition accuracy can reach 88.8%.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

China Postdoctoral Science Foundation

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH00645J

Reference42 articles.

1. Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics

2. Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application

3. Dynamical memristors for higher-complexity neuromorphic computing

4. Sub-nanosecond memristor based on ferroelectric tunnel junction

5. Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

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