Deciphering the photophysical properties of near-infrared quantum emitters in AlGaN films by transition dynamics

Author:

Xue Yingxian1,Yuan Junxiao23,Li Qian2,Chen Feiliang4,Yuan Xinrui1,Ju Zhiping1,Zhang Shiyu1,Wu Botao1,Hou Yidong3ORCID,Li Mo4,Zhang Jian4,Wu E156ORCID

Affiliation:

1. State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China

2. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China

3. College of Physics, Sichuan University, Chengdu, Sichuan 610065, China

4. School of Electronics Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

5. Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China

6. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China

Abstract

We investigate the key photophysical properties of NIR quantum emitters from point defects in AlGaN films both theoretically and experimentally.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Science Challenge Project

Fundamental Research Funds for the Central Universities

East China Normal University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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