Hexacene generated on passivated silicon-Reference-Cited by-同舟云学术

Hexacene generated on passivated silicon

Published:2018 Issue:26 Volume:10 Page:12582-12587
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Eisenhut Frank¹²³⁴⁵,Krüger Justus¹²³⁴⁵,Skidin Dmitry¹²³⁴⁵,Nikipar Seddigheh¹²³⁴⁵,Alonso José M.⁶⁷⁸⁹,Guitián Enrique⁶⁷⁸⁹^ORCID,Pérez Dolores⁶⁷⁸⁹^ORCID,Ryndyk Dmitry A.¹²³⁴¹⁰,Peña Diego⁶⁷⁸⁹^ORCID,Moresco Francesca¹²³⁴⁵^ORCID,Cuniberti Gianaurelio¹²³⁴⁵^ORCID

Affiliation:

1. Institute for Materials Science and Max Bergmann Center of Biomaterials

2. TU Dresden

3. 01069 Dresden

4. Germany

5. Center for Advancing Electronics Dresden

6. Centro de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química Orgánica

7. Universidade de Santiago de Compostela

8. 15782-Santiago de Compostela

9. Spain

10. Bremen Center for Computational Materials Science (BCCMS)

Abstract

On-surface generation of hexacene by surface-assisted reduction on a H-passivated Si(001) surface.

Funder

FP7 Information and Communication Technologies

Deutsche Forschungsgemeinschaft

European Regional Development Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR03422B

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