Self-formed C-dot-based 2D polysiloxane with high photoluminescence quantum yield and stability-Reference-Cited by-同舟云学术

Self-formed C-dot-based 2D polysiloxane with high photoluminescence quantum yield and stability

Published:2020 Issue:19 Volume:12 Page:10771-10780
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hu Guangqi¹²³⁴⁵,Xu Xiaokai⁵⁶⁷⁸⁴,Lei Bingfu⁵⁶⁷⁸⁴^ORCID,Zhuang Jianle⁵⁶⁷⁸⁴^ORCID,Zhang Xuejie⁵⁶⁷⁸⁴^ORCID,Zhang Haoran⁵⁶⁷⁸⁴,Hu Chaofan⁵⁶⁷⁸⁴^ORCID,Liu Xiaotang⁵⁶⁷⁸⁴,He Yingji¹²³⁴,Liu Yingliang⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. School of Photoelectric Engineering

2. Guangdong Polytechnic Normal University

3. Guangzhou 510665

4. China

5. Key Laboratory for Biobased Materials and Energy of Ministry of Education/Guangdong Provincial Engineering Technology Research Center for Optical Agriculture

6. College of Materials and Energy

7. South China Agricultural University

8. Guangzhou, 510642

Abstract

A novel 2D polysiloxane embedded with Si-doped-carbon-dots was synthesized, which shows dual-fluorescence emission, and high photoluminescence quantum yields and stability.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00743A

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3. Synthesis of color-tunable Cu–In–Ga–S solid solution quantum dots with high quantum yields for application to white light-emitting diodes