The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth
Author:
Affiliation:
1. State Key Laboratory of Crystal Materials
2. Shandong University
3. Jinan
4. China
5. School of Mechanical, Electrical & Information Engineering
6. Weihai
7. Institute of Optics and Electronics
8. Chinese Academy of Science
9. Chengdu
Abstract
The theoretical calculations and experiments were employed to study the effect of the exposed SiC surface on epitaxial graphene growth.
Funder
Natural Science Foundation of Shandong Province
China Postdoctoral Science Foundation
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA21858J
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