Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

Published:2021 Issue:26 Volume:11 Page:15632-15638
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Jianya¹²³⁴⁵,Zhou Min¹²³⁴⁵,Wu Dongmin¹²³⁴⁵,Bian Lifeng¹²³⁴⁵,Zhao Yukun¹²³⁴^ORCID,Qin Hua¹²³⁴⁵,Yang Wenxian¹²³⁴,Wu Yuanyuan¹²³⁴,Xing Zhiwei¹²³⁴⁵,Lu Shulong¹²³⁴⁵

Affiliation:

1. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)

2. Chinese Academy of Sciences (CAS)

3. 215123 Suzhou

4. China

5. School of Nano-Tech and Nano-Bionics

Abstract

A dual-wavelength (blue/red) photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully, which is promising for wide applications. The rise time of the response can reach 3.5 ms.

Funder

Natural Science Foundation of Jiangxi Province

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

National Key Research and Development Program of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA02439F