Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition-Reference-Cited by-同舟云学术

Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition

Published:2018 Issue:19 Volume:8 Page:10593-10597
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Alnuaimi Aaesha¹²³⁴⁵^ORCID,Almansouri Ibraheem⁵⁶⁷⁸⁴,Saadat Irfan⁵⁶⁷⁸⁴,Nayfeh Ammar⁵⁶⁷⁸⁴

Affiliation:

1. Research and Development Centre

2. Dubai Electricity and Water Authority (DEWA)

3. Dubai

4. United Arab Emirates

5. Department of Electrical and Computer Engineering (ECE)

6. Masdar Institute

7. Khalifa University of Science and Technology

8. Abu Dhabi

Abstract

One approach to improve Gr/Si SBSC performance is engineering the interface with an interfacial layer. We demonstrate the improved performance of Gr/Si SBSC upon engineering the interface with an aluminium oxide (Al₂O₃) layer grown by atomic layer deposition (ALD)..

Funder

Masdar Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA13443F

Reference34 articles.

1. Transparent graphene/PEDOT–PSS composite films as counter electrodes of dye-sensitized solar cells

2. The Application of Highly Doped Single-Layer Graphene as the Top Electrodes of Semitransparent Organic Solar Cells

3. Graphene as a counter electrode material for dye-sensitized solar cells