Wide range bandgap modulation in strained SrSnO3 epitaxial films
Author:
Affiliation:
1. School of Physics and Electronic Information
2. Huaibei Normal University
3. Huaibei 235000
4. People's Republic of China
5. Changzhou Institute of Technology
6. Changzhou
7. Key Laboratory of Green and Precise Synthetic Chemistry and Application
Abstract
The bandgap of SrSnO3 films increases with IP strains on both LAO and MgO substrates, which are consistent with theory calculation results.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06211D
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