On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiC-Reference-Cited by-同舟云学术

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On the origin of epitaxial rhombohedral-B₄C growth by CVD on 4H-SiC

Published:2024 Issue:25 Volume:53 Page:10730-10736
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Sharma Sachin¹^ORCID,Souqui Laurent¹^ORCID,Palisaitis Justinas¹^ORCID,Hoang Duc Quang¹,Ivanov Ivan G.¹,Persson Per O. Å.¹^ORCID,Högberg Hans¹^ORCID,Pedersen Henrik¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden

Abstract

We use atomic scale analytical transmission electron microscopy techniques to study the film/substrate interface in epitaxial growth of rhombohedral-B4C on 4H-SiC. We note that the interface is atomically smooth without signs of any interlayer.

Funder

Vetenskapsrådet

Linköpings Universitet

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/DT/D4DT01157K

Reference31 articles.

1. An experimental study on ballistic performance of boron carbide tiles

2. Enhanced mechanical properties of nanocrystalline boron carbide by nanoporosity and interface phases

3. Lightweight Design and Experimental Study of Ceramic Composite Armor

4. A proposed boron-carbide-based solid-state neutron detector

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