Hydrogen incorporation effect in phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering-Reference-Cited by-同舟云学术

Hydrogen incorporation effect in phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Published:2017 Issue:26 Volume:7 Page:16119-16125
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Oh Min-Suk¹²³⁴,Navamathavan R.⁵⁶⁷⁸⁹^ORCID

Affiliation:

1. Automotive Components and Materials R&D Group

2. Korea Institute of Industrial Technology (KITECH)

3. Gwangju 61012

4. Korea

5. Division of Physics

6. School of Advanced Sciences

7. VIT University Chennai

8. Chennai – 600 127

9. India

Abstract

We report on the influence of hydrogen incorporation on the conductivity of phosphorous (P) doped ZnO thin films grown by using radio-frequency (RF) magnetron sputtering.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA00759K

Reference31 articles.

1. ZnO thin films and light-emitting diodes

2. Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

3. Low-threshold two-photon pumped ZnO nanowire lasers

4. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

5. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

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