Ethoxy and silsesquioxane derivatives of antimony as dopant precursors: unravelling the structure and thermal stability of surface species on SiO2-Reference-Cited by-同舟云学术

Ethoxy and silsesquioxane derivatives of antimony as dopant precursors: unravelling the structure and thermal stability of surface species on SiO2

Published:2017 Issue:12 Volume:19 Page:8595-8601
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Alphazan T.¹²³⁴⁵,Florian P.⁶⁷⁸⁹,Thieuleux C.¹⁰¹¹¹²⁹^ORCID

Affiliation:

1. Univ. Grenoble Alpes

2. FR-38000 Grenoble

3. CEA

4. LETI

5. Minatec Campus

6. Conditions Extrêmes et Matériaux: Haute Température et Irradiation

7. CNRS-UPR 3079

8. 45071 Orléans, Cedex 2

9. France

10. C2P2

11. CPE Lyon

12. 69616 Villeurbanne cedex

Abstract

We report here the controlled preparation of SiO₂ supported Sb-(mono)layers and their thorough characterization (in situ IR, solid-state NMR, elemental analyses) for the non-destructive Sb-doping of semiconductors.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C6CP08583K

Reference40 articles.

1. Doped Nanocrystals

2. Doping semiconductor nanocrystals

3. Surface Functionalization of Electrodes with Molecular Reagents

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