Defect modification engineering on a laminar MoS2 film for optimizing thermoelectric properties-Reference-Cited by-同舟云学术

Defect modification engineering on a laminar MoS2 film for optimizing thermoelectric properties

Published:2020 Issue:6 Volume:8 Page:1909-1914
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ding Wenjun¹²³⁴,Li Xia¹²³⁴,Jiang Fengxing¹²³⁴^ORCID,Liu Peng¹²³⁴,Liu Peipei¹²³⁴,Zhu Shuai¹²³⁴,Zhang Ge¹²³⁴^ORCID,Liu Congcong¹²³⁴,Xu Jingkun¹²³⁴⁵^ORCID

Affiliation:

1. Jiangxi Key Laboratory of Organic Chemistry

2. Jiangxi Science and Technology Normal University

3. Nanchang 330013

4. P. R. China

5. College of Chemistry and Molecular Engineering

Abstract

A high carrier mobility and high Seebeck coefficient laminar MoS₂–Cu film was obtained via effective defect modification.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Education Department of Jiangxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06012J

Reference53 articles.

1. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

2. Sonication-assisted liquid-phase exfoliated α-GeTe: a two-dimensional material with high Fe3+ sensitivity

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4. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

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