Controlling the interfacial reactions and environment of rare-earth ions in thin oxide films towards wafer-scalable quantum technologies-Reference-Cited by-同舟云学术

Controlling the interfacial reactions and environment of rare-earth ions in thin oxide films towards wafer-scalable quantum technologies

Published:2022 Issue:1 Volume:3 Page:300-311
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Harada N.¹,Tallaire A.¹,Serrano D.¹,Seyeux A.¹,Marcus P.¹,Portier X.²,Labbé C.²,Goldner P.¹^ORCID,Ferrier A.¹³^ORCID

Affiliation:

1. Chimie Paris Tech, PSL University, CNRS, Institut de Recherche de Chimie Pairs, Paris, 75005, France

2. CIMAP, CEA, UMR CNRS 6252, ENSICAEN, Normandie Université, Caen Cedex 04 14050, France

3. Faculté des Sciences et Ingénierie, Sorbonne Universités, UFR 933, Paris 7505, France

Abstract

Encapsulating the active layer containing rare-earth ions between undoped thick layers allows limiting interfacial reactions during thermal annealing and leads to narrower homogeneous and inhomogeneous linewidths.

Funder

Agence Nationale de la Recherche

Horizon 2020 Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D1MA00753J

Reference64 articles.

1. Rare-earth-doped materials for applications in quantum information storage and signal processing

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