Band tail-induced photoluminescence broadening in heavily In-doped n-type ZnO nanowires-Reference-Cited by-同舟云学术

Band tail-induced photoluminescence broadening in heavily In-doped n-type ZnO nanowires

Published:2015 Issue:27 Volume:17 Page:17552-17556
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

He H. P.¹²³⁴⁵,Wang Z.¹²³⁴⁵,Duan H. F.¹²³⁴⁵,Ye Z. Z.¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Silicon Materials

2. School of Materials Science and Engineering

3. Zhejiang University

4. Hangzhou

5. People's Republic of China

Abstract

The formation of the impurity band in heavily In-doped ZnO nanowires results in a remarkable broadening of photoluminescence even at low temperature, which can be used to estimate the electron concentration.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP02934A

Reference36 articles.

1. Ten years’ venturing in ZnO nanostructures: from discovery to scientific understanding and to technology applications

2. Size-Dependent Surface Effects on the Photoluminescence in ZnO Nanorods

3. ZnO Coaxial Nanorod Homojunction UV Light-Emitting Diodes Prepared by Aqueous Solution Method

4. Enhanced waveguide-type ultraviolet electroluminescence from ZnO/MgZnO core/shell nanorod array light-emitting diodes via coupling with Ag nanoparticles localized surface plasmons

5. Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

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