Excellent high temperature field emission behavior with an ultra-low turn-on field and reliable current emission stability from SiC@SiO2@graphene nanoarray emitters-Reference-Cited by-同舟云学术

Excellent high temperature field emission behavior with an ultra-low turn-on field and reliable current emission stability from SiC@SiO2@graphene nanoarray emitters

Published:2018 Issue:11 Volume:6 Page:2678-2683
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Z. J.¹²³⁴^ORCID,Zhao J.¹²³⁴,Zhang M.⁵²⁶⁷^ORCID,Wang Y. Q.⁸²⁶⁷,Ding S. Q.⁵²⁶⁷,Song G. Y.⁵²⁶⁷,Meng A. L.⁸²⁶⁷^ORCID,Li Q. D.¹²³⁴

Affiliation:

1. College of Sino-German Science and Technology

2. Qingdao University of Science and Technology

3. Qingdao 266061

4. P. R. China

5. School of Electromechanical Engineering

6. Qingdao

7. China

8. School of Chemistry and Molecular Engineering

Abstract

SiC@SiO₂@graphene nanoarrays with numerous flake-like graphene coatings have been prepared on a Si substrate through a simple chemical vapor deposition (CVD) approach.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05357F

Reference49 articles.

1. Epitaxial ZnO Nanowire-on-Nanoplate Structures as Efficient and Transferable Field Emitters

2. One-dimensional inorganic nanostructures: synthesis, field-emission and photodetection